High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment

Effects of bias stress on ZnO nanowire field-effect transistors fabricated with organic gate nanodielectrics

Solution processable multi-channel ZnO nanowire field-effect transistors with organic gate dielectric.

The present work focuses on nanowire (NW) applications as semiconducting elements in solution processable field-effect transistors (FETs) targeting large-area low-cost electronics. We address one of the main challenges related to NW deposition and alignment by using dielectrophoresis (DEP) to select multiple ZnO nanowires with the correct length, and to attract, orientate and position them in p...

High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

High-performance GaAs metal-insulator-semiconductor field-effect-transistors MISFETs fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n-channel GaAs MISFET with SAND thicknesses ranging from 5.5 to 16.5 nm exhibit a gate leakage current density 10−5 A/cm2 at a gate bias...

High-performance ZnO nanowire transistors with aluminum top-gate electrodes and naturally formed hybrid self-assembled monolayer/AlO(x) gate dielectric.

A method for the formation of a low-temperature hybrid gate dielectric for high-performance, top-gate ZnO nanowire transistors is reported. The hybrid gate dielectric consists of a self-assembled monolayer (SAM) and an aluminum oxide layer. The thin aluminum oxide layer forms naturally and spontaneously when the aluminum gate electrode is deposited by thermal evaporation onto the SAM-covered Zn...

High performance In2O3 nanowire transistors using organic gate nanodielectrics